Updated in 3/11/2014 6:47:34 PM      Viewed: 235 times      (Journal Article)
Nano Research 3: 110–116 (2010)

Crystallographically selective nanopatterning of graphene on SiO2

Péter Nemes-Incze , Gábor Magda , Katalin Kamarás , László Péter Biró
Graphene has many advantageous properties, but its lack
of an electronic band gap makes this two-dimensional
material impractical for many nanoelectronic applications
, for example, field-effect transistors. This problem
can be circumvented by opening up a
confinement-induced gap, through the patterning of graphene into ribbons
having widths of a few nanome
tres. The electronic properties of such ri
bbons depend on both their size and the
crystallographic orientation of the ribbon edges. Theref
ore, etching processes that are able to differentiate
between the zigzag and armchair type edge terminations of
graphene are highly sought after. In this contribution
we show that such an anisotropic, dry etching reaction is possible and we use it to obtain graphene ribbons
with zigzag edges. We demonstrate that the starting posi
tions for the carbon removal reaction can be tailored at
will with precision
DOI: 10.1007/s12274-010-1015-3